MECHANISM FOR FORMING METAL GATE STRUCTURE

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a metal gate stack formed on the semiconductor substrate, and the metal gate stack includes a metal gate electrode. The semiconductor device also includes a met...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUEN SHICHANG, LIU CHI-JEN, WU LIIEH, CHEN LIANG-GUANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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