METHOD OF READING MEMORY CELLS WITH DIFFERENT THRESHOLD VOLTAGES WITHOUT VARIATION OF WORD LINE VOLTAGE AND NONVOLATILE MEMORY DEVICE USING THE SAME

A soft-decision read method of a nonvolatile memory device includes receiving a soft-decision read command, applying a read voltage to a selected word line, pre-charging bit lines respectively connected to selected memory cells of the selected word line, continuously sensing states of the selected m...

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Hauptverfasser:	LEE JU SEOK, CHOI KIHWAN, JOO SANG-HYUN, SONG KIWHAN
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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creator	LEE JU SEOK CHOI KIHWAN JOO SANG-HYUN SONG KIWHAN
description	A soft-decision read method of a nonvolatile memory device includes receiving a soft-decision read command, applying a read voltage to a selected word line, pre-charging bit lines respectively connected to selected memory cells of the selected word line, continuously sensing states of the selected memory cells. The pre-charged voltages of the bit lines and the read voltage supplied to the selected word line are not varied during the sensing states of the selected memory cells.
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subjects	INFORMATION STORAGE PHYSICS STATIC STORES
title	METHOD OF READING MEMORY CELLS WITH DIFFERENT THRESHOLD VOLTAGES WITHOUT VARIATION OF WORD LINE VOLTAGE AND NONVOLATILE MEMORY DEVICE USING THE SAME
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