Method to Reduce Program Disturbs in Non-Volatile Memory Cells

A non-volatile memory and methods of operating the same to reduce disturbs is provided. In one embodiment, the method includes coupling a first positive high voltage to a first global wordline in a first row of an array of memory cells, and coupling a second negative high voltage (VNEG) to a first b...

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Bibliographische Detailangaben

Hauptverfasser:	HIROSE RYAN T, GEORGESCU BOGDAN I, SHAKERI KAVEH, PRABHAKAR VENKATRAMAN, KOUZNETSOV IGOR G
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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