FILLING CAVITIES IN SEMICONDUCTOR STRUCTURES HAVING ADHESION PROMOTING LAYER IN THE CAVITIES

FILLING CAVITIES IN SEMICONDUCTOR STRUCTURES HAVING ADHESION PROMOTING LAYER IN THE CAVITIES

High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close of the trench at the top during filling may be reduced in sonic embodiments. Material that encourages the growth of metal may be formed...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HORVITZ DROR, ROTLAIN MAOR, DRORI ROTEM, ROZENBLAT AVI, HAIMSON SHAI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close of the trench at the top during filling may be reduced in sonic embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.