MULTI-GATE FIELD-EFFECT TRANSISTOR PROCESS

A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitax...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE BO-SYUAN, LIAO CHIN-I, CHEN CHIEN-HAO, LI MING-YEN, HSIEH YUNG-LUN, HSU CHIA-LIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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