INDUCTIVE ELEMENT WITH INTERRUPTER REGION AND METHOD FOR FORMING

A semiconductor device structure a semiconductor substrate having a first conductivity type and a top surface. A plurality of first doped regions is at a first depth below the top surface arranged in a checkerboard fashion. The first doped regions are of a second conductivity type. A dielectric laye...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DEMIRCAN ERTUGRUL, MCNELLY THOMAS F
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!