INDUCTIVE ELEMENT WITH INTERRUPTER REGION AND METHOD FOR FORMING

INDUCTIVE ELEMENT WITH INTERRUPTER REGION AND METHOD FOR FORMING

A semiconductor device structure a semiconductor substrate having a first conductivity type and a top surface. A plurality of first doped regions is at a first depth below the top surface arranged in a checkerboard fashion. The first doped regions are of a second conductivity type. A dielectric laye...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: DEMIRCAN ERTUGRUL, MCNELLY THOMAS F
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A semiconductor device structure a semiconductor substrate having a first conductivity type and a top surface. A plurality of first doped regions is at a first depth below the top surface arranged in a checkerboard fashion. The first doped regions are of a second conductivity type. A dielectric layer is over the top surface. An inductive element is over the dielectric layer, wherein the inductive element is over the first doped regions.