CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS
Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized la...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | RAMANATHAN SIVAKAMI OUTKA DUANE CASTILLO SONIA KERNS JOHN MICHAEL XU LIN AMADIO ANTHONY HOLLAND PETER SHIH HONG O'NEILL ROBERT G DAUGHERTY JOHN KIM TAE WON |
| description | Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2014272459A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2014272459A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2014272459A13</originalsourceid><addsrcrecordid>eNrjZHB09g8K8g_29PdTCHIN9gwOcfQLUXD0CfX19Av1VXD2dwzx9HNXAMoG-DgG-zoqOHs4-jq5BgFlfAP8_Vz9QoJ5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaGJkbmRiamlo6ExcaoAs7wsPw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS</title><source>esp@cenet</source><creator>RAMANATHAN SIVAKAMI ; OUTKA DUANE ; CASTILLO SONIA ; KERNS JOHN MICHAEL ; XU LIN ; AMADIO ANTHONY ; HOLLAND PETER ; SHIH HONG ; O'NEILL ROBERT G ; DAUGHERTY JOHN ; KIM TAE WON</creator><creatorcontrib>RAMANATHAN SIVAKAMI ; OUTKA DUANE ; CASTILLO SONIA ; KERNS JOHN MICHAEL ; XU LIN ; AMADIO ANTHONY ; HOLLAND PETER ; SHIH HONG ; O'NEILL ROBERT G ; DAUGHERTY JOHN ; KIM TAE WON</creatorcontrib><description>Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.</description><language>eng</language><subject>ALLOYS ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FERROUS OR NON-FERROUS ALLOYS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140918&DB=EPODOC&CC=US&NR=2014272459A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140918&DB=EPODOC&CC=US&NR=2014272459A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RAMANATHAN SIVAKAMI</creatorcontrib><creatorcontrib>OUTKA DUANE</creatorcontrib><creatorcontrib>CASTILLO SONIA</creatorcontrib><creatorcontrib>KERNS JOHN MICHAEL</creatorcontrib><creatorcontrib>XU LIN</creatorcontrib><creatorcontrib>AMADIO ANTHONY</creatorcontrib><creatorcontrib>HOLLAND PETER</creatorcontrib><creatorcontrib>SHIH HONG</creatorcontrib><creatorcontrib>O'NEILL ROBERT G</creatorcontrib><creatorcontrib>DAUGHERTY JOHN</creatorcontrib><creatorcontrib>KIM TAE WON</creatorcontrib><title>CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS</title><description>Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.</description><subject>ALLOYS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB09g8K8g_29PdTCHIN9gwOcfQLUXD0CfX19Av1VXD2dwzx9HNXAMoG-DgG-zoqOHs4-jq5BgFlfAP8_Vz9QoJ5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaGJkbmRiamlo6ExcaoAs7wsPw</recordid><startdate>20140918</startdate><enddate>20140918</enddate><creator>RAMANATHAN SIVAKAMI</creator><creator>OUTKA DUANE</creator><creator>CASTILLO SONIA</creator><creator>KERNS JOHN MICHAEL</creator><creator>XU LIN</creator><creator>AMADIO ANTHONY</creator><creator>HOLLAND PETER</creator><creator>SHIH HONG</creator><creator>O'NEILL ROBERT G</creator><creator>DAUGHERTY JOHN</creator><creator>KIM TAE WON</creator><scope>EVB</scope></search><sort><creationdate>20140918</creationdate><title>CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS</title><author>RAMANATHAN SIVAKAMI ; OUTKA DUANE ; CASTILLO SONIA ; KERNS JOHN MICHAEL ; XU LIN ; AMADIO ANTHONY ; HOLLAND PETER ; SHIH HONG ; O'NEILL ROBERT G ; DAUGHERTY JOHN ; KIM TAE WON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2014272459A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ALLOYS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>RAMANATHAN SIVAKAMI</creatorcontrib><creatorcontrib>OUTKA DUANE</creatorcontrib><creatorcontrib>CASTILLO SONIA</creatorcontrib><creatorcontrib>KERNS JOHN MICHAEL</creatorcontrib><creatorcontrib>XU LIN</creatorcontrib><creatorcontrib>AMADIO ANTHONY</creatorcontrib><creatorcontrib>HOLLAND PETER</creatorcontrib><creatorcontrib>SHIH HONG</creatorcontrib><creatorcontrib>O'NEILL ROBERT G</creatorcontrib><creatorcontrib>DAUGHERTY JOHN</creatorcontrib><creatorcontrib>KIM TAE WON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RAMANATHAN SIVAKAMI</au><au>OUTKA DUANE</au><au>CASTILLO SONIA</au><au>KERNS JOHN MICHAEL</au><au>XU LIN</au><au>AMADIO ANTHONY</au><au>HOLLAND PETER</au><au>SHIH HONG</au><au>O'NEILL ROBERT G</au><au>DAUGHERTY JOHN</au><au>KIM TAE WON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS</title><date>2014-09-18</date><risdate>2014</risdate><abstract>Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2014272459A1 |
| source | esp@cenet |
| subjects | ALLOYS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T09%3A29%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RAMANATHAN%20SIVAKAMI&rft.date=2014-09-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2014272459A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |