EEPROM MEMORY CELL WITH LOW VOLTAGE READ PATH AND HIGH VOLTAGE ERASE/WRITE PATH

An electrically erasable programmable read only memory (EEPROM) cell may include a substrate including at least one active region, a floating gate adjacent the substrate, a write/erase gate defining a write/erase path for performing high voltage write and erase operations, and a read gate defining a...

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Bibliographische Detailangaben

Hauptverfasser:	HYMAS MEL, ALVAREZ DANIEL, SHIELDS JEFFREY A, DARYANANI SONU, HEWITT KENT, CHEN BOMY, WONG JACK
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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