CAPACITIVE PRESSURE SENSOR AND METHOD

CAPACITIVE PRESSURE SENSOR AND METHOD

In one embodiment, a method of forming a MEMS device includes providing a silicon wafer with a base layer and an intermediate layer above an upper surface of the base layer. A first electrode is defined in the intermediate layer and an oxide portion is provided above an upper surface of the intermed...

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Hauptverfasser: GRAHAM ANDREW B, FEYH ANDO
Format: Patent
Sprache:eng
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MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
TRANSPORTING
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creator GRAHAM ANDREW B
FEYH ANDO
description In one embodiment, a method of forming a MEMS device includes providing a silicon wafer with a base layer and an intermediate layer above an upper surface of the base layer. A first electrode is defined in the intermediate layer and an oxide portion is provided above an upper surface of the intermediate layer. A cap layer is provided on an upper surface of the oxide portion and a second electrode is defined in the cap layer. The method further includes etching the oxide portion to form a cavity such that when the second electrode and the cavity are projected onto the intermediate layer, the projected second electrode encompasses the projected cavity.
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subjects MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
TRANSPORTING
title CAPACITIVE PRESSURE SENSOR AND METHOD
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