MICROMACHINED ULTRASONIC TRANSDUCER DEVICES WITH METAL-SEMICONDUCTOR CONTACT FOR REDUCED CAPACITIVE CROSS-TALK
Embodiments reduce capacitive cross-talk between micromachined ultrasonic transducer (MUT) arrays through grounding of the substrate over which the arrays are fabricated. In embodiments, a metal-semiconductor contact is formed to a semiconductor device layer of a substrate and coupled to a ground pl...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LAW STEPHEN HAJATI ARMAN LATEV DIMITRE GARDNER DEANE |
| description | Embodiments reduce capacitive cross-talk between micromachined ultrasonic transducer (MUT) arrays through grounding of the substrate over which the arrays are fabricated. In embodiments, a metal-semiconductor contact is formed to a semiconductor device layer of a substrate and coupled to a ground plane common to a first electrode of the transducer elements to suppress capacitive coupling of signal lines connected to a second electrode of the transducer elements. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2014219063A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2014219063A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2014219063A13</originalsourceid><addsrcrecordid>eNqNjc0KwjAQhHvxIOo7LHgu9EeEHsNmSxfbRJJtPZYi8SS1UN8fI_gAnuaDmY_ZJnPH6GynsGFDGvpWnPLWMEIE43WP5EDTwEgebiwNdCSqTT1F0ZrYi3UQSRQK1JEdfSUNqK4KWXggiA_ep1G77JPNY3qu4fDLXXKsSbBJw_Iaw7pM9zCH99j7IstPRV5l51Ll5X-rD49nOJw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MICROMACHINED ULTRASONIC TRANSDUCER DEVICES WITH METAL-SEMICONDUCTOR CONTACT FOR REDUCED CAPACITIVE CROSS-TALK</title><source>esp@cenet</source><creator>LAW STEPHEN ; HAJATI ARMAN ; LATEV DIMITRE ; GARDNER DEANE</creator><creatorcontrib>LAW STEPHEN ; HAJATI ARMAN ; LATEV DIMITRE ; GARDNER DEANE</creatorcontrib><description>Embodiments reduce capacitive cross-talk between micromachined ultrasonic transducer (MUT) arrays through grounding of the substrate over which the arrays are fabricated. In embodiments, a metal-semiconductor contact is formed to a semiconductor device layer of a substrate and coupled to a ground plane common to a first electrode of the transducer elements to suppress capacitive coupling of signal lines connected to a second electrode of the transducer elements.</description><language>eng</language><subject>ELECTRICITY</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140807&DB=EPODOC&CC=US&NR=2014219063A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140807&DB=EPODOC&CC=US&NR=2014219063A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAW STEPHEN</creatorcontrib><creatorcontrib>HAJATI ARMAN</creatorcontrib><creatorcontrib>LATEV DIMITRE</creatorcontrib><creatorcontrib>GARDNER DEANE</creatorcontrib><title>MICROMACHINED ULTRASONIC TRANSDUCER DEVICES WITH METAL-SEMICONDUCTOR CONTACT FOR REDUCED CAPACITIVE CROSS-TALK</title><description>Embodiments reduce capacitive cross-talk between micromachined ultrasonic transducer (MUT) arrays through grounding of the substrate over which the arrays are fabricated. In embodiments, a metal-semiconductor contact is formed to a semiconductor device layer of a substrate and coupled to a ground plane common to a first electrode of the transducer elements to suppress capacitive coupling of signal lines connected to a second electrode of the transducer elements.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjc0KwjAQhHvxIOo7LHgu9EeEHsNmSxfbRJJtPZYi8SS1UN8fI_gAnuaDmY_ZJnPH6GynsGFDGvpWnPLWMEIE43WP5EDTwEgebiwNdCSqTT1F0ZrYi3UQSRQK1JEdfSUNqK4KWXggiA_ep1G77JPNY3qu4fDLXXKsSbBJw_Iaw7pM9zCH99j7IstPRV5l51Ll5X-rD49nOJw</recordid><startdate>20140807</startdate><enddate>20140807</enddate><creator>LAW STEPHEN</creator><creator>HAJATI ARMAN</creator><creator>LATEV DIMITRE</creator><creator>GARDNER DEANE</creator><scope>EVB</scope></search><sort><creationdate>20140807</creationdate><title>MICROMACHINED ULTRASONIC TRANSDUCER DEVICES WITH METAL-SEMICONDUCTOR CONTACT FOR REDUCED CAPACITIVE CROSS-TALK</title><author>LAW STEPHEN ; HAJATI ARMAN ; LATEV DIMITRE ; GARDNER DEANE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2014219063A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>LAW STEPHEN</creatorcontrib><creatorcontrib>HAJATI ARMAN</creatorcontrib><creatorcontrib>LATEV DIMITRE</creatorcontrib><creatorcontrib>GARDNER DEANE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAW STEPHEN</au><au>HAJATI ARMAN</au><au>LATEV DIMITRE</au><au>GARDNER DEANE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MICROMACHINED ULTRASONIC TRANSDUCER DEVICES WITH METAL-SEMICONDUCTOR CONTACT FOR REDUCED CAPACITIVE CROSS-TALK</title><date>2014-08-07</date><risdate>2014</risdate><abstract>Embodiments reduce capacitive cross-talk between micromachined ultrasonic transducer (MUT) arrays through grounding of the substrate over which the arrays are fabricated. In embodiments, a metal-semiconductor contact is formed to a semiconductor device layer of a substrate and coupled to a ground plane common to a first electrode of the transducer elements to suppress capacitive coupling of signal lines connected to a second electrode of the transducer elements.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2014219063A1 |
| source | esp@cenet |
| subjects | ELECTRICITY |
| title | MICROMACHINED ULTRASONIC TRANSDUCER DEVICES WITH METAL-SEMICONDUCTOR CONTACT FOR REDUCED CAPACITIVE CROSS-TALK |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T22%3A57%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LAW%20STEPHEN&rft.date=2014-08-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2014219063A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |