XRF measurement apparatus for detecting contaminations on the bevel of a wafer

An XRF (XRF=x-ray fluorescence) measurement apparatus (1) has an x-ray source (2) for generating x-rays (4), x-ray optics (3) for directing x-rays (4) from the x-ray source (2) to a sample (5) and an EDS (EDS=energy dispersive spectroscopy) detector (7) for detecting fluorescent x-rays (14) from the...

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Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
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creator	VIGLIANTE ASSUNTA
description	An XRF (XRF=x-ray fluorescence) measurement apparatus (1) has an x-ray source (2) for generating x-rays (4), x-ray optics (3) for directing x-rays (4) from the x-ray source (2) to a sample (5) and an EDS (EDS=energy dispersive spectroscopy) detector (7) for detecting fluorescent x-rays (14) from the sample (5). The apparatus is characterized in that the sample (5) is a wafer (6), in particular a Si wafer, wherein the x-ray optics (3) is positioned to direct the x-rays (4) onto the bevel (12) of the wafer (6). The x-ray source (2) plus the x-ray optics (3) has a brilliance of at least 5107 counts/sec mm2, preferably at least 1108counts/sec mm2. The apparatus allows an improved contamination control of wafers, in particular silicon wafers.
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subjects	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
title	XRF measurement apparatus for detecting contaminations on the bevel of a wafer
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