METHODS OF FORMING A PORUOUS INSULATOR, AND RELATED METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES

Semiconductor devices with porous insulative materials are disclosed. The porous insulative materials may include a consolidated material with voids dispersed therethrough. The voids may be defined by shells of microcapsules. The voids impart the dielectric materials with reduced dielectric constant...

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Hauptverfasser:	FARNWORTH WARREN M, JIANG TONGBI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	FARNWORTH WARREN M JIANG TONGBI
description	Semiconductor devices with porous insulative materials are disclosed. The porous insulative materials may include a consolidated material with voids dispersed therethrough. The voids may be defined by shells of microcapsules. The voids impart the dielectric materials with reduced dielectric constants and, thus, increased electrical insulation properties.
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title	METHODS OF FORMING A PORUOUS INSULATOR, AND RELATED METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES
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