Gallium Nitride Devices

Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JOHNSON JERRY WAYNE, THERRIEN ROBERT JOSEPH, HANSON ALLEN W
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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