CRUCIBLE FOR PRODUCING COMPOUND CRYSTAL, APPARATUS FOR PRODUCING COMPOUND CRYSTAL, AND METHOD FOR PRODUCING COMPOUND CRYSTAL USING CRUCIBLE

A crucible for use in producing a compound crystal in which a pre-treated product is made by melting a powdery or granular compound raw material and then cooling and solidifying it in a pre-treatment furnace, and the compound crystal is grown by melting the pre-treated product and then cooling and s...

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1. Verfasser: SUGISAKI HIDENORI
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creator SUGISAKI HIDENORI
description A crucible for use in producing a compound crystal in which a pre-treated product is made by melting a powdery or granular compound raw material and then cooling and solidifying it in a pre-treatment furnace, and the compound crystal is grown by melting the pre-treated product and then cooling and solidifying it in a crystal growing furnace, the crucible comprising: a first member having a bottom portion and a cylindrical portion; and a hollow cylindrical second member that is capable to be connected to the cylindrical portion and to be separated therefrom, wherein: in a state in which the first member and the second member are connected together, a large capacity crucible for manufacture of the pre-treated product is formed; and in a state in which the first member and the second member are separated from one another, a small capacity crucible for crystal growth is formed.
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and a hollow cylindrical second member that is capable to be connected to the cylindrical portion and to be separated therefrom, wherein: in a state in which the first member and the second member are connected together, a large capacity crucible for manufacture of the pre-treated product is formed; and in a state in which the first member and the second member are separated from one another, a small capacity crucible for crystal growth is formed.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; 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subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title CRUCIBLE FOR PRODUCING COMPOUND CRYSTAL, APPARATUS FOR PRODUCING COMPOUND CRYSTAL, AND METHOD FOR PRODUCING COMPOUND CRYSTAL USING CRUCIBLE
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