DEFECTIVE MEMORY COLUMN REPLACEMENT WITH LOAD ISOLATION

DEFECTIVE MEMORY COLUMN REPLACEMENT WITH LOAD ISOLATION

Exemplary embodiments of the present invention disclose a method and system for substituting a group of memory cells for a defective group of memory cells in a memory. In a step, an exemplary embodiment replaces a signal path to a group of defective memory cells with a signal path to a redundant gro...

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Hauptverfasser: PENTH SILKE, POLIG RAPHAEL, WERNER TOBIAS, WOERNER ALEXANDER
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator PENTH SILKE
POLIG RAPHAEL
WERNER TOBIAS
WOERNER ALEXANDER
description Exemplary embodiments of the present invention disclose a method and system for substituting a group of memory cells for a defective group of memory cells in a memory. In a step, an exemplary embodiment replaces a signal path to a group of defective memory cells with a signal path to a redundant group of memory cells. In another step, an exemplary embodiment isolates the signal path to the redundant group of memory cells from a load imposed by the signal path to the replaced group of defective memory cells.
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title DEFECTIVE MEMORY COLUMN REPLACEMENT WITH LOAD ISOLATION
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