Adaptive Charge Balanced MOSFET Techniques

Adaptive Charge Balanced MOSFET Techniques

An adaptive charge balanced MOSFET device includes a field plate stacks, a gate structure, a source region, a drift region and a body region. The gate structure includes a gate region surrounded by a gate insulator region. The field plate stack includes a plurality of field plate insulator regions,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TIPIRNENI NAVEEN, PATTANAYAK DEVA N
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator TIPIRNENI NAVEEN
PATTANAYAK DEVA N
description An adaptive charge balanced MOSFET device includes a field plate stacks, a gate structure, a source region, a drift region and a body region. The gate structure includes a gate region surrounded by a gate insulator region. The field plate stack includes a plurality of field plate insulator regions, a plurality of field plate regions, and a field ring region. The plurality of field plates are separated from each other by respective field plate insulators. The body region is disposed between the gate structure, the source region, the drift region and the field ring region. Each of two or more field plates are coupled to the field ring.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2014183624A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2014183624A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2014183624A13</originalsourceid><addsrcrecordid>eNrjZNByTEksKMksS1VwzkgsSk9VcErMScxLTk1R8PUPdnMNUQhJTc7IyywsTS3mYWBNS8wpTuWF0twMykAFzh66qQX58anFBYnJqXmpJfGhwUYGhiaGFsZmRiaOhsbEqQIAXaAo7A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Adaptive Charge Balanced MOSFET Techniques</title><source>esp@cenet</source><creator>TIPIRNENI NAVEEN ; PATTANAYAK DEVA N</creator><creatorcontrib>TIPIRNENI NAVEEN ; PATTANAYAK DEVA N</creatorcontrib><description>An adaptive charge balanced MOSFET device includes a field plate stacks, a gate structure, a source region, a drift region and a body region. The gate structure includes a gate region surrounded by a gate insulator region. The field plate stack includes a plurality of field plate insulator regions, a plurality of field plate regions, and a field ring region. The plurality of field plates are separated from each other by respective field plate insulators. The body region is disposed between the gate structure, the source region, the drift region and the field ring region. Each of two or more field plates are coupled to the field ring.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140703&amp;DB=EPODOC&amp;CC=US&amp;NR=2014183624A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140703&amp;DB=EPODOC&amp;CC=US&amp;NR=2014183624A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TIPIRNENI NAVEEN</creatorcontrib><creatorcontrib>PATTANAYAK DEVA N</creatorcontrib><title>Adaptive Charge Balanced MOSFET Techniques</title><description>An adaptive charge balanced MOSFET device includes a field plate stacks, a gate structure, a source region, a drift region and a body region. The gate structure includes a gate region surrounded by a gate insulator region. The field plate stack includes a plurality of field plate insulator regions, a plurality of field plate regions, and a field ring region. The plurality of field plates are separated from each other by respective field plate insulators. The body region is disposed between the gate structure, the source region, the drift region and the field ring region. Each of two or more field plates are coupled to the field ring.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNByTEksKMksS1VwzkgsSk9VcErMScxLTk1R8PUPdnMNUQhJTc7IyywsTS3mYWBNS8wpTuWF0twMykAFzh66qQX58anFBYnJqXmpJfGhwUYGhiaGFsZmRiaOhsbEqQIAXaAo7A</recordid><startdate>20140703</startdate><enddate>20140703</enddate><creator>TIPIRNENI NAVEEN</creator><creator>PATTANAYAK DEVA N</creator><scope>EVB</scope></search><sort><creationdate>20140703</creationdate><title>Adaptive Charge Balanced MOSFET Techniques</title><author>TIPIRNENI NAVEEN ; PATTANAYAK DEVA N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2014183624A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TIPIRNENI NAVEEN</creatorcontrib><creatorcontrib>PATTANAYAK DEVA N</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TIPIRNENI NAVEEN</au><au>PATTANAYAK DEVA N</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Adaptive Charge Balanced MOSFET Techniques</title><date>2014-07-03</date><risdate>2014</risdate><abstract>An adaptive charge balanced MOSFET device includes a field plate stacks, a gate structure, a source region, a drift region and a body region. The gate structure includes a gate region surrounded by a gate insulator region. The field plate stack includes a plurality of field plate insulator regions, a plurality of field plate regions, and a field ring region. The plurality of field plates are separated from each other by respective field plate insulators. The body region is disposed between the gate structure, the source region, the drift region and the field ring region. Each of two or more field plates are coupled to the field ring.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2014183624A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Adaptive Charge Balanced MOSFET Techniques
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T14%3A17%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TIPIRNENI%20NAVEEN&rft.date=2014-07-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2014183624A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true