EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) ALTERNATING PHASE SHIFT MASK

An alternating phase shift mask for use with extreme ultraviolet lithography is provided. A substrate with a planar top surface is used as a base for the phase shift mask. A spacer layer serves as a Fabry-Perot cavity for controlling the phase shift difference between two adjacent surfaces of the ph...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WOOD, II OBERT R, MANGAT PAWITTER S, SUN LEI, JINDAL VIBHU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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