SEMICONDUCTOR DEVICE WITH SINGLE-EVENT LATCH-UP PREVENTION CIRCUITRY

A semiconductor device includes a parasitic silicon-controlled rectifier (SCR) and a first transistor. The parasitic SCR includes a parasitic pnp bipolar junction transistor (BJT) and a parasitic npn BJT. The first transistor is coupled between a first power supply node and an emitter of the parasit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YANG JIANAN, BURNETT JAMES D, GARNI BRAD J, LISTON THOMAS W
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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