METHOD OF FORMING A SEMICONDUCTOR STRUCTURE, AND A SEMICONDUCTOR STRUCTURE
A method of forming a semiconductor structure in accordance with various embodiments may include: forming at least one opening in a workpiece; forming a first conductive layer within the at least one opening, the first conductive layer not completely filling the at least one opening; forming a fill...
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creator | BRUNNER HELMUT HIRSCHLER JOACHIM |
description | A method of forming a semiconductor structure in accordance with various embodiments may include: forming at least one opening in a workpiece; forming a first conductive layer within the at least one opening, the first conductive layer not completely filling the at least one opening; forming a fill layer over the first conductive layer within the at least one opening; and forming a second conductive layer over the fill layer. |
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HIRSCHLER JOACHIM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2014145345A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BRUNNER HELMUT</creatorcontrib><creatorcontrib>HIRSCHLER JOACHIM</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BRUNNER HELMUT</au><au>HIRSCHLER JOACHIM</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF FORMING A SEMICONDUCTOR STRUCTURE, AND A SEMICONDUCTOR STRUCTURE</title><date>2014-05-29</date><risdate>2014</risdate><abstract>A method of forming a semiconductor structure in accordance with various embodiments may include: forming at least one opening in a workpiece; forming a first conductive layer within the at least one opening, the first conductive layer not completely filling the at least one opening; forming a fill layer over the first conductive layer within the at least one opening; and forming a second conductive layer over the fill layer.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | METHOD OF FORMING A SEMICONDUCTOR STRUCTURE, AND A SEMICONDUCTOR STRUCTURE |
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