Reducing Glitching In An Ion Implanter
Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the i...
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| creator | GAMMEL GEORGE M BINNS BRANT S WHITE RICHARD M LEVAY WILLIAM T KOO BON-WOONG |
| description | Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2014099430A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2014099430A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2014099430A13</originalsourceid><addsrcrecordid>eNrjZFALSk0pTc7MS1dwz8ksSc4AsTzzFBzzFDzzgTi3ICcxryS1iIeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYmhhYWpoYGzgaGhOnCgCw3Sej</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Reducing Glitching In An Ion Implanter</title><source>esp@cenet</source><creator>GAMMEL GEORGE M ; BINNS BRANT S ; WHITE RICHARD M ; LEVAY WILLIAM T ; KOO BON-WOONG</creator><creatorcontrib>GAMMEL GEORGE M ; BINNS BRANT S ; WHITE RICHARD M ; LEVAY WILLIAM T ; KOO BON-WOONG</creatorcontrib><description>Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140410&DB=EPODOC&CC=US&NR=2014099430A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140410&DB=EPODOC&CC=US&NR=2014099430A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GAMMEL GEORGE M</creatorcontrib><creatorcontrib>BINNS BRANT S</creatorcontrib><creatorcontrib>WHITE RICHARD M</creatorcontrib><creatorcontrib>LEVAY WILLIAM T</creatorcontrib><creatorcontrib>KOO BON-WOONG</creatorcontrib><title>Reducing Glitching In An Ion Implanter</title><description>Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFALSk0pTc7MS1dwz8ksSc4AsTzzFBzzFDzzgTi3ICcxryS1iIeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYmhhYWpoYGzgaGhOnCgCw3Sej</recordid><startdate>20140410</startdate><enddate>20140410</enddate><creator>GAMMEL GEORGE M</creator><creator>BINNS BRANT S</creator><creator>WHITE RICHARD M</creator><creator>LEVAY WILLIAM T</creator><creator>KOO BON-WOONG</creator><scope>EVB</scope></search><sort><creationdate>20140410</creationdate><title>Reducing Glitching In An Ion Implanter</title><author>GAMMEL GEORGE M ; BINNS BRANT S ; WHITE RICHARD M ; LEVAY WILLIAM T ; KOO BON-WOONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2014099430A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>GAMMEL GEORGE M</creatorcontrib><creatorcontrib>BINNS BRANT S</creatorcontrib><creatorcontrib>WHITE RICHARD M</creatorcontrib><creatorcontrib>LEVAY WILLIAM T</creatorcontrib><creatorcontrib>KOO BON-WOONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GAMMEL GEORGE M</au><au>BINNS BRANT S</au><au>WHITE RICHARD M</au><au>LEVAY WILLIAM T</au><au>KOO BON-WOONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reducing Glitching In An Ion Implanter</title><date>2014-04-10</date><risdate>2014</risdate><abstract>Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Reducing Glitching In An Ion Implanter |
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