INTEGRATED VERTICAL TRENCH MOS TRANSISTOR

A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor mate...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MICCICHE MONICA, PATTI DAVIDE GIUSEPPE, GRIMALDI ANTONIO GIUSEPPE, LIOTTA SALVATORE, LONGHITANO ANGELA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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