INTEGRATED VERTICAL TRENCH MOS TRANSISTOR

INTEGRATED VERTICAL TRENCH MOS TRANSISTOR

A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor mate...

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Hauptverfasser: MICCICHE MONICA, PATTI DAVIDE GIUSEPPE, GRIMALDI ANTONIO GIUSEPPE, LIOTTA SALVATORE, LONGHITANO ANGELA
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MICCICHE MONICA
PATTI DAVIDE GIUSEPPE
GRIMALDI ANTONIO GIUSEPPE
LIOTTA SALVATORE
LONGHITANO ANGELA
description A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2014084360A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2014084360A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2014084360A13</originalsourceid><addsrcrecordid>eNrjZND09AtxdQ9yDHF1UQhzDQrxdHb0UQgJcvVz9lDw9Q8GMh39gj2DQ_yDeBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhiYGFibGZgaOhMXGqANllJYk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INTEGRATED VERTICAL TRENCH MOS TRANSISTOR</title><source>esp@cenet</source><creator>MICCICHE MONICA ; PATTI DAVIDE GIUSEPPE ; GRIMALDI ANTONIO GIUSEPPE ; LIOTTA SALVATORE ; LONGHITANO ANGELA</creator><creatorcontrib>MICCICHE MONICA ; PATTI DAVIDE GIUSEPPE ; GRIMALDI ANTONIO GIUSEPPE ; LIOTTA SALVATORE ; LONGHITANO ANGELA</creatorcontrib><description>A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140327&amp;DB=EPODOC&amp;CC=US&amp;NR=2014084360A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140327&amp;DB=EPODOC&amp;CC=US&amp;NR=2014084360A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MICCICHE MONICA</creatorcontrib><creatorcontrib>PATTI DAVIDE GIUSEPPE</creatorcontrib><creatorcontrib>GRIMALDI ANTONIO GIUSEPPE</creatorcontrib><creatorcontrib>LIOTTA SALVATORE</creatorcontrib><creatorcontrib>LONGHITANO ANGELA</creatorcontrib><title>INTEGRATED VERTICAL TRENCH MOS TRANSISTOR</title><description>A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND09AtxdQ9yDHF1UQhzDQrxdHb0UQgJcvVz9lDw9Q8GMh39gj2DQ_yDeBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhiYGFibGZgaOhMXGqANllJYk</recordid><startdate>20140327</startdate><enddate>20140327</enddate><creator>MICCICHE MONICA</creator><creator>PATTI DAVIDE GIUSEPPE</creator><creator>GRIMALDI ANTONIO GIUSEPPE</creator><creator>LIOTTA SALVATORE</creator><creator>LONGHITANO ANGELA</creator><scope>EVB</scope></search><sort><creationdate>20140327</creationdate><title>INTEGRATED VERTICAL TRENCH MOS TRANSISTOR</title><author>MICCICHE MONICA ; PATTI DAVIDE GIUSEPPE ; GRIMALDI ANTONIO GIUSEPPE ; LIOTTA SALVATORE ; LONGHITANO ANGELA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2014084360A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MICCICHE MONICA</creatorcontrib><creatorcontrib>PATTI DAVIDE GIUSEPPE</creatorcontrib><creatorcontrib>GRIMALDI ANTONIO GIUSEPPE</creatorcontrib><creatorcontrib>LIOTTA SALVATORE</creatorcontrib><creatorcontrib>LONGHITANO ANGELA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MICCICHE MONICA</au><au>PATTI DAVIDE GIUSEPPE</au><au>GRIMALDI ANTONIO GIUSEPPE</au><au>LIOTTA SALVATORE</au><au>LONGHITANO ANGELA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INTEGRATED VERTICAL TRENCH MOS TRANSISTOR</title><date>2014-03-27</date><risdate>2014</risdate><abstract>A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title INTEGRATED VERTICAL TRENCH MOS TRANSISTOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T18%3A37%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MICCICHE%20MONICA&rft.date=2014-03-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2014084360A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true