METHOD OF SILICON ETCH FOR TRENCH SIDEWALL SMOOTHING
Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas t...
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| creator | YU KEVEN KUMAR AJAY |
| description | Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2014057446A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2014057446A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2014057446A13</originalsourceid><addsrcrecordid>eNrjZDDxdQ3x8HdR8HdTCPb08XT291NwDXH2UHDzD1IICXL1AzKDPV1cwx19fBSCff39Qzw8_dx5GFjTEnOKU3mhNDeDshtIl25qQX58anFBYnJqXmpJfGiwkYGhiYGpuYmJmaOhMXGqAFGvKDQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF SILICON ETCH FOR TRENCH SIDEWALL SMOOTHING</title><source>esp@cenet</source><creator>YU KEVEN ; KUMAR AJAY</creator><creatorcontrib>YU KEVEN ; KUMAR AJAY</creatorcontrib><description>Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140227&DB=EPODOC&CC=US&NR=2014057446A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140227&DB=EPODOC&CC=US&NR=2014057446A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YU KEVEN</creatorcontrib><creatorcontrib>KUMAR AJAY</creatorcontrib><title>METHOD OF SILICON ETCH FOR TRENCH SIDEWALL SMOOTHING</title><description>Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDxdQ3x8HdR8HdTCPb08XT291NwDXH2UHDzD1IICXL1AzKDPV1cwx19fBSCff39Qzw8_dx5GFjTEnOKU3mhNDeDshtIl25qQX58anFBYnJqXmpJfGiwkYGhiYGpuYmJmaOhMXGqAFGvKDQ</recordid><startdate>20140227</startdate><enddate>20140227</enddate><creator>YU KEVEN</creator><creator>KUMAR AJAY</creator><scope>EVB</scope></search><sort><creationdate>20140227</creationdate><title>METHOD OF SILICON ETCH FOR TRENCH SIDEWALL SMOOTHING</title><author>YU KEVEN ; KUMAR AJAY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2014057446A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YU KEVEN</creatorcontrib><creatorcontrib>KUMAR AJAY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YU KEVEN</au><au>KUMAR AJAY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF SILICON ETCH FOR TRENCH SIDEWALL SMOOTHING</title><date>2014-02-27</date><risdate>2014</risdate><abstract>Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | METHOD OF SILICON ETCH FOR TRENCH SIDEWALL SMOOTHING |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T04%3A57%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YU%20KEVEN&rft.date=2014-02-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2014057446A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |