GATE DRIVE CIRCUIT

A gate drive circuit for driving an IGBT serving as a power semiconductor device includes a constant-current gate drive circuit that charges a gate capacity of the IGBT at a constant current, and a constant-voltage gate drive circuit that is connected in parallel to the constant-current gate drive c...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TAMURA SHIZURI, NAKATAKE HIROSHI, KANEKO MASASHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A gate drive circuit for driving an IGBT serving as a power semiconductor device includes a constant-current gate drive circuit that charges a gate capacity of the IGBT at a constant current, and a constant-voltage gate drive circuit that is connected in parallel to the constant-current gate drive circuit between input and output terminals thereof via a series circuit constituted by a MOSFET and a resistor, and charges the gate capacity of the IGBT at a constant voltage, wherein the gate drive circuit charges the gate capacity of the IGBT using both the constant-current gate drive circuit and the constant-voltage gate drive circuit at the time of driving the IGBT.