APPARATUS FOR CYLINDRICAL MAGNETRON SPUTTERING
A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted...
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creator | GERMAN JOHN R HARTIG KLAUS H.W |
description | A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted to make the shape and strength of the confinement field at the turns of the racetrack closely match the shape and strength of the confinement field along the straight part of the racetrack so as to significantly reduce cross-corner effect. |
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The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted to make the shape and strength of the confinement field at the turns of the racetrack closely match the shape and strength of the confinement field along the straight part of the racetrack so as to significantly reduce cross-corner effect.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140227&DB=EPODOC&CC=US&NR=2014054168A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140227&DB=EPODOC&CC=US&NR=2014054168A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GERMAN JOHN R</creatorcontrib><creatorcontrib>HARTIG KLAUS H.W</creatorcontrib><title>APPARATUS FOR CYLINDRICAL MAGNETRON SPUTTERING</title><description>A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted to make the shape and strength of the confinement field at the turns of the racetrack closely match the shape and strength of the confinement field along the straight part of the racetrack so as to significantly reduce cross-corner effect.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBzDAhwDHIMCQ1WcPMPUnCO9PH0cwnydHb0UfB1dPdzDQny91MIDggNCXEN8vRz52FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGJgamJoZmFo6GxsSpAgCjZScN</recordid><startdate>20140227</startdate><enddate>20140227</enddate><creator>GERMAN JOHN R</creator><creator>HARTIG KLAUS H.W</creator><scope>EVB</scope></search><sort><creationdate>20140227</creationdate><title>APPARATUS FOR CYLINDRICAL MAGNETRON SPUTTERING</title><author>GERMAN JOHN R ; HARTIG KLAUS H.W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2014054168A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>GERMAN JOHN R</creatorcontrib><creatorcontrib>HARTIG KLAUS H.W</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GERMAN JOHN R</au><au>HARTIG KLAUS H.W</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR CYLINDRICAL MAGNETRON SPUTTERING</title><date>2014-02-27</date><risdate>2014</risdate><abstract>A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted to make the shape and strength of the confinement field at the turns of the racetrack closely match the shape and strength of the confinement field along the straight part of the racetrack so as to significantly reduce cross-corner effect.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | APPARATUS FOR CYLINDRICAL MAGNETRON SPUTTERING |
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