MEMORY ERASING METHOD AND DRIVING CIRCUIT THEREOF

MEMORY ERASING METHOD AND DRIVING CIRCUIT THEREOF

A memory erasing method and a driving circuit thereof are introduced, when cells are selected to be erased, the method includes setting gates of cells which are not selected to be erased and are located at a selected block, drains of all the cells in a selected bank, and the gate of the unselected c...

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Hauptverfasser: WANG YUUN, LU HSIAO-HUA, KUO CHIH-MING
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Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator WANG YUUN
LU HSIAO-HUA
KUO CHIH-MING
description A memory erasing method and a driving circuit thereof are introduced, when cells are selected to be erased, the method includes setting gates of cells which are not selected to be erased and are located at a selected block, drains of all the cells in a selected bank, and the gate of the unselected cells to be floating; supplying a positive voltage to all the sources in a selected bank and their shared P well and N well; and supplying a negative voltage to the gates of the cells located in a selected block and selected to be erased. Accordingly, a positive coupling voltage from P wells is received whenever gates are floating, so as to inhibit erasure of unselected blocks and thereby streamline decoding, thus making it easy to attain further expansion of blocks or banks with a small layout area and partition of sectors in the blocks.
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title MEMORY ERASING METHOD AND DRIVING CIRCUIT THEREOF
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