STRESS-BASED TECHNIQUES FOR DETECTING AN IMMINENT READ FAILURE IN A NON-VOLATILE MEMORY ARRAY

A technique for detecting an imminent read failure in a non-volatile memory array includes applying a bulk read stress to a plurality of cells of the non-volatile memory array and determining whether the plurality of cells exhibit an uncorrectable error correcting code (ECC) read during an array int...

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Hauptverfasser: EGUCHI RICHARD K, HE CHEN
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HE CHEN
description A technique for detecting an imminent read failure in a non-volatile memory array includes applying a bulk read stress to a plurality of cells of the non-volatile memory array and determining whether the plurality of cells exhibit an uncorrectable error correcting code (ECC) read during an array integrity check at a margin read verify voltage level subsequent to the bulk read stress. The technique also includes providing an indication of an imminent read failure for the plurality of cells when the plurality of cells exhibit the uncorrectable ECC read during the array integrity check. In this case, the margin read verify voltage level is different from a normal read verify voltage level.
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subjects BASIC ELECTRONIC CIRCUITRY
CALCULATING
CODE CONVERSION IN GENERAL
CODING
COMPUTING
COUNTING
DECODING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title STRESS-BASED TECHNIQUES FOR DETECTING AN IMMINENT READ FAILURE IN A NON-VOLATILE MEMORY ARRAY
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