FORMING FACET-LESS EPITAXY WITH A CUT MASK

A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also de...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AQUILINO MICHAEL VINCENT, KIM BYEONG YEOL, RADENS CARL JOHN, LI YING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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