FORMING FACET-LESS EPITAXY WITH A CUT MASK

FORMING FACET-LESS EPITAXY WITH A CUT MASK

A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also de...

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Hauptverfasser: AQUILINO MICHAEL VINCENT, KIM BYEONG YEOL, RADENS CARL JOHN, LI YING
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator AQUILINO MICHAEL VINCENT
KIM BYEONG YEOL
RADENS CARL JOHN
LI YING
description A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also deposited on a second region of the continuous active layer such that the first raised epitaxial layer is in close proximity to the second raised epitaxial layer. A mask may be used to etch a trench structure into the continuous active layer at both the first and the second raised epitaxial layer, whereby the etched trench structure is filled with isolation material for electrically isolating the first raised epitaxial layer from the second raised epitaxial layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FORMING FACET-LESS EPITAXY WITH A CUT MASK
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