Semiconductor Device and Method of Forming Guard Ring Around Conductive TSV Through Semiconductor Wafer

A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. An insulating lining is formed around the conductive vias and a conductive layer is formed over the insulating lining. A portion of the semiconductor wafer is removed so the conductive vias extend above a su...

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Hauptverfasser: NA DUK JU, CHIA LAI YEE, YONG CHANG BEOM
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CHIA LAI YEE
YONG CHANG BEOM
description A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. An insulating lining is formed around the conductive vias and a conductive layer is formed over the insulating lining. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the first insulating layer is removed and a second portion of the first insulating layer remains as guard rings around the conductive vias. A conductive layer is formed over the conductive vias. A second insulating layer is formed over the surface of the semiconductor wafer, guard rings, and conductive vias. A portion of the second insulating layer is removed to expose the conductive vias and a portion of the guard rings.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor Device and Method of Forming Guard Ring Around Conductive TSV Through Semiconductor Wafer
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