ELECTROMAGNETIC CASTING METHOD AND APPARATUS FOR POLYCRYSTALLINE SILICON

Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by charging silicon raw materials into a bottomless cold mold, melting the silicon raw materials using electromagnetic induction heating, and pulling...

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Hauptverfasser: MAEGAWA KOICHI, ONIZUKA TOMOHIRO, YOSHIHARA MITSUO
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creator MAEGAWA KOICHI
ONIZUKA TOMOHIRO
YOSHIHARA MITSUO
description Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by charging silicon raw materials into a bottomless cold mold, melting the silicon raw materials using electromagnetic induction heating, and pulling down the molten silicon to solidify it, wherein the depth of solid-liquid interface before the start of the final solidification process is decreased by reducing a pull down rate of ingot in a final phase of steady-state casting. By adopting the method, the region of precipitation of foreign substances in the finally solidified portion of ingot can be reduced and cracking generation can be prevented upon production of a polycrystalline silicon as a substrate material for a solar cell.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2013255315A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2013255315A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2013255315A13</originalsourceid><addsrcrecordid>eNrjZPBw9XF1Dgny93V093MN8XRWcHYMDvH0c1fwdQ3x8HdRcPQD4oAAxyDHkNBgBTf_IIUAf59I56DI4BBHHx9PP1eFYE8fT2d_Px4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgaGxkampsaOpoaEycKgDm2C4j</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTROMAGNETIC CASTING METHOD AND APPARATUS FOR POLYCRYSTALLINE SILICON</title><source>esp@cenet</source><creator>MAEGAWA KOICHI ; ONIZUKA TOMOHIRO ; YOSHIHARA MITSUO</creator><creatorcontrib>MAEGAWA KOICHI ; ONIZUKA TOMOHIRO ; YOSHIHARA MITSUO</creatorcontrib><description>Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by charging silicon raw materials into a bottomless cold mold, melting the silicon raw materials using electromagnetic induction heating, and pulling down the molten silicon to solidify it, wherein the depth of solid-liquid interface before the start of the final solidification process is decreased by reducing a pull down rate of ingot in a final phase of steady-state casting. By adopting the method, the region of precipitation of foreign substances in the finally solidified portion of ingot can be reduced and cracking generation can be prevented upon production of a polycrystalline silicon as a substrate material for a solar cell.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20131003&amp;DB=EPODOC&amp;CC=US&amp;NR=2013255315A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20131003&amp;DB=EPODOC&amp;CC=US&amp;NR=2013255315A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAEGAWA KOICHI</creatorcontrib><creatorcontrib>ONIZUKA TOMOHIRO</creatorcontrib><creatorcontrib>YOSHIHARA MITSUO</creatorcontrib><title>ELECTROMAGNETIC CASTING METHOD AND APPARATUS FOR POLYCRYSTALLINE SILICON</title><description>Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by charging silicon raw materials into a bottomless cold mold, melting the silicon raw materials using electromagnetic induction heating, and pulling down the molten silicon to solidify it, wherein the depth of solid-liquid interface before the start of the final solidification process is decreased by reducing a pull down rate of ingot in a final phase of steady-state casting. By adopting the method, the region of precipitation of foreign substances in the finally solidified portion of ingot can be reduced and cracking generation can be prevented upon production of a polycrystalline silicon as a substrate material for a solar cell.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPBw9XF1Dgny93V093MN8XRWcHYMDvH0c1fwdQ3x8HdRcPQD4oAAxyDHkNBgBTf_IIUAf59I56DI4BBHHx9PP1eFYE8fT2d_Px4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgaGxkampsaOpoaEycKgDm2C4j</recordid><startdate>20131003</startdate><enddate>20131003</enddate><creator>MAEGAWA KOICHI</creator><creator>ONIZUKA TOMOHIRO</creator><creator>YOSHIHARA MITSUO</creator><scope>EVB</scope></search><sort><creationdate>20131003</creationdate><title>ELECTROMAGNETIC CASTING METHOD AND APPARATUS FOR POLYCRYSTALLINE SILICON</title><author>MAEGAWA KOICHI ; ONIZUKA TOMOHIRO ; YOSHIHARA MITSUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2013255315A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MAEGAWA KOICHI</creatorcontrib><creatorcontrib>ONIZUKA TOMOHIRO</creatorcontrib><creatorcontrib>YOSHIHARA MITSUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAEGAWA KOICHI</au><au>ONIZUKA TOMOHIRO</au><au>YOSHIHARA MITSUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTROMAGNETIC CASTING METHOD AND APPARATUS FOR POLYCRYSTALLINE SILICON</title><date>2013-10-03</date><risdate>2013</risdate><abstract>Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by charging silicon raw materials into a bottomless cold mold, melting the silicon raw materials using electromagnetic induction heating, and pulling down the molten silicon to solidify it, wherein the depth of solid-liquid interface before the start of the final solidification process is decreased by reducing a pull down rate of ingot in a final phase of steady-state casting. By adopting the method, the region of precipitation of foreign substances in the finally solidified portion of ingot can be reduced and cracking generation can be prevented upon production of a polycrystalline silicon as a substrate material for a solar cell.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title ELECTROMAGNETIC CASTING METHOD AND APPARATUS FOR POLYCRYSTALLINE SILICON
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T05%3A21%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MAEGAWA%20KOICHI&rft.date=2013-10-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2013255315A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true