METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE AND SEMICONDUCTOR STORAGE DEVICE

Method of manufacturing a semiconductor device includes forming, in a first region, a first trench through a second gate electrode film and an interelectrode insulating film, and a second trench partially extending into a sacrificial film in an isolation trench, filling the second trench with a firs...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MIYAZAKI SHOICHI, MATSUNO KOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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