FTO THIN FILM PREPARATION USING MAGNETRON SPUTTERING DEPOSITION WITH PURE TIN TARGET
A fluorine-doped tin oxide (FTO) film preparation method includes the step of using a high purity tin ingot in a magnetron sputtering deposition as a target material, the step of applying argon (Ar) as a working gas to generate plasma for removing impurities from the tin target in increasing the pur...
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| creator | LEE CHENGUNG |
| description | A fluorine-doped tin oxide (FTO) film preparation method includes the step of using a high purity tin ingot in a magnetron sputtering deposition as a target material, the step of applying argon (Ar) as a working gas to generate plasma for removing impurities from the tin target in increasing the purity of the tin target, and the step of applying reactive gases containing F atoms (CF4) and oxygen (O2) for enabling tetrafluoromethane (CF4) to be dissociated by the generated plasma into fluorine ions and excited fluorine atoms for deposition with tin ions from the tin target on a substrate to form a thin film of fluorine-doped tin oxide on the substrate. |
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INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE CHENGUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE CHENGUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FTO THIN FILM PREPARATION USING MAGNETRON SPUTTERING DEPOSITION WITH PURE TIN TARGET</title><date>2013-09-19</date><risdate>2013</risdate><abstract>A fluorine-doped tin oxide (FTO) film preparation method includes the step of using a high purity tin ingot in a magnetron sputtering deposition as a target material, the step of applying argon (Ar) as a working gas to generate plasma for removing impurities from the tin target in increasing the purity of the tin target, and the step of applying reactive gases containing F atoms (CF4) and oxygen (O2) for enabling tetrafluoromethane (CF4) to be dissociated by the generated plasma into fluorine ions and excited fluorine atoms for deposition with tin ions from the tin target on a substrate to form a thin film of fluorine-doped tin oxide on the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FTO THIN FILM PREPARATION USING MAGNETRON SPUTTERING DEPOSITION WITH PURE TIN TARGET |
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