METHOD FOR CONVERTING SEMICONDUCTOR LAYERS
The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma...
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| creator | WIEBER STEPHAN STENNER PATRIK PATZ MATTHIAS COELLE MICHAEL |
| description | The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma nozzle (1). The present invention further relates to semiconductor layers produced by the process, to electronic and optoelectronic products comprising such semiconductor layers, and to a plasma source for performance of the process according to the invention. |
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| subjects | BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM |
| title | METHOD FOR CONVERTING SEMICONDUCTOR LAYERS |
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