E/P DURABILITY BY USING A SUB-RANGE OF A FULL PROGRAMMING RANGE

E/P DURABILITY BY USING A SUB-RANGE OF A FULL PROGRAMMING RANGE

An instruction to perform an erase on a group of one or more memory cells is sent. An indication that the erasure of the group of memory cells is unsuccessful is received. In response to receiving the indication that the erasure of the group of memory cells is unsuccessful, the value of a voltage th...

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Hauptverfasser: LEE MENG-KUN, YEUNG KWOK W
Format: Patent
Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator LEE MENG-KUN
YEUNG KWOK W
description An instruction to perform an erase on a group of one or more memory cells is sent. An indication that the erasure of the group of memory cells is unsuccessful is received. In response to receiving the indication that the erasure of the group of memory cells is unsuccessful, the value of a voltage threshold, associated with the group of memory cells, is changed to a new voltage threshold and the new voltage threshold and identification information associated with the group of memory cells is stored.
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title E/P DURABILITY BY USING A SUB-RANGE OF A FULL PROGRAMMING RANGE
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