ONE-TIME PROGRAMMABLE MEMORY AND METHOD FOR MAKING THE SAME

A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.

Bibliographische Detailangaben

Hauptverfasser:	LUAN HARRY S, WONG TING-WAH, HE YUE-SONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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