ONE-TIME PROGRAMMABLE MEMORY AND METHOD FOR MAKING THE SAME
A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate. |
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