REPLACEMENT GATE MOSFET WITH RAISED SOURCE AND DRAIN

A disposable dielectric spacer is formed on sidewalls of a disposable material stack. Raised source/drain regions are formed on planar source/drain regions by selective epitaxy. The disposable dielectric spacer is removed to expose portions of a semiconductor layer between the disposable material st...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HORAK DAVID V, PONOTH SHOM, YANG CHIHAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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