ETCH RATE DETECTION FOR ANTI-REFLECTIVE COATING LAYER AND ABSORBER LAYER ETCHING

A method and apparatus for etching a photomask substrate with enhanced process monitoring is provided. In one embodiment, a method of determining an etching endpoint includes performing an etching process on a first tantalum containing layer through a patterned mask layer, directing a radiation sour...

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Bibliographische Detailangaben
1. Verfasser: GRIMBERGEN MICHAEL
Format: Patent
Sprache:eng
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