THIN-FILM TRANSISTOR, METHOD FOR FABRICATING THIN-FILM TRANSISTOR, AND DISPLAY DEVICE

A thin-film transistor according to the present disclosure is capable of balancing excellent on-characteristics and excellent off-characteristics, and in which the electrical characteristics are symmetric even when the source electrode and the drain electrode are switched. The thin-film transistor i...

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Hauptverfasser: KAWASHIMA TAKAHIRO, HAYASHI HIROSHI, KAWACHI GENSHIROU
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creator KAWASHIMA TAKAHIRO
HAYASHI HIROSHI
KAWACHI GENSHIROU
description A thin-film transistor according to the present disclosure is capable of balancing excellent on-characteristics and excellent off-characteristics, and in which the electrical characteristics are symmetric even when the source electrode and the drain electrode are switched. The thin-film transistor includes: a substrate; a gate electrode; a gate insulating layer; a crystalline silicon layer above the gate insulating layer above the gate electrode; a non-crystalline silicon layer above the gate insulating layer and on both sides of the crystalline silicon layer, having a thickness smaller than a thickness of the crystalline silicon layer; a channel protective layer above the crystalline silicon layer; and a source electrode and a drain electrode.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title THIN-FILM TRANSISTOR, METHOD FOR FABRICATING THIN-FILM TRANSISTOR, AND DISPLAY DEVICE
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