THIN-FILM TRANSISTOR, METHOD FOR FABRICATING THIN-FILM TRANSISTOR, AND DISPLAY DEVICE

A thin-film transistor according to the present disclosure is capable of balancing excellent on-characteristics and excellent off-characteristics, and in which the electrical characteristics are symmetric even when the source electrode and the drain electrode are switched. The thin-film transistor includes: a substrate; a gate electrode; a gate insulating layer; a crystalline silicon layer above the gate insulating layer above the gate electrode; a non-crystalline silicon layer above the gate insulating layer and on both sides of the crystalline silicon layer, having a thickness smaller than a thickness of the crystalline silicon layer; a channel protective layer above the crystalline silicon layer; and a source electrode and a drain electrode.