Optoelectronic Structures with High Lumens Per Wafer

An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to...

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Hauptverfasser: EMERSON DAVID TODD, EDMOND JOHN
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creator EMERSON DAVID TODD
EDMOND JOHN
description An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2013146904A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2013146904A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2013146904A13</originalsourceid><addsrcrecordid>eNrjZDDxLyjJT81JTS4pys_LTFYILikqTS4pLUotVijPLMlQ8MhMz1DwKc1NzStWCEgtUghPTEst4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGxoYmZpYGJo6GxsSpAgDt6C2l</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Optoelectronic Structures with High Lumens Per Wafer</title><source>esp@cenet</source><creator>EMERSON DAVID TODD ; EDMOND JOHN</creator><creatorcontrib>EMERSON DAVID TODD ; EDMOND JOHN</creatorcontrib><description>An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130613&amp;DB=EPODOC&amp;CC=US&amp;NR=2013146904A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130613&amp;DB=EPODOC&amp;CC=US&amp;NR=2013146904A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>EMERSON DAVID TODD</creatorcontrib><creatorcontrib>EDMOND JOHN</creatorcontrib><title>Optoelectronic Structures with High Lumens Per Wafer</title><description>An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDxLyjJT81JTS4pys_LTFYILikqTS4pLUotVijPLMlQ8MhMz1DwKc1NzStWCEgtUghPTEst4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGxoYmZpYGJo6GxsSpAgDt6C2l</recordid><startdate>20130613</startdate><enddate>20130613</enddate><creator>EMERSON DAVID TODD</creator><creator>EDMOND JOHN</creator><scope>EVB</scope></search><sort><creationdate>20130613</creationdate><title>Optoelectronic Structures with High Lumens Per Wafer</title><author>EMERSON DAVID TODD ; EDMOND JOHN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2013146904A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>EMERSON DAVID TODD</creatorcontrib><creatorcontrib>EDMOND JOHN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>EMERSON DAVID TODD</au><au>EDMOND JOHN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Optoelectronic Structures with High Lumens Per Wafer</title><date>2013-06-13</date><risdate>2013</risdate><abstract>An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Optoelectronic Structures with High Lumens Per Wafer
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T12%3A17%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=EMERSON%20DAVID%20TODD&rft.date=2013-06-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2013146904A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true