Optoelectronic Structures with High Lumens Per Wafer
An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to...
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creator | EMERSON DAVID TODD EDMOND JOHN |
description | An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2013146904A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2013146904A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2013146904A13</originalsourceid><addsrcrecordid>eNrjZDDxLyjJT81JTS4pys_LTFYILikqTS4pLUotVijPLMlQ8MhMz1DwKc1NzStWCEgtUghPTEst4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGxoYmZpYGJo6GxsSpAgDt6C2l</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Optoelectronic Structures with High Lumens Per Wafer</title><source>esp@cenet</source><creator>EMERSON DAVID TODD ; EDMOND JOHN</creator><creatorcontrib>EMERSON DAVID TODD ; EDMOND JOHN</creatorcontrib><description>An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130613&DB=EPODOC&CC=US&NR=2013146904A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130613&DB=EPODOC&CC=US&NR=2013146904A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>EMERSON DAVID TODD</creatorcontrib><creatorcontrib>EDMOND JOHN</creatorcontrib><title>Optoelectronic Structures with High Lumens Per Wafer</title><description>An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDxLyjJT81JTS4pys_LTFYILikqTS4pLUotVijPLMlQ8MhMz1DwKc1NzStWCEgtUghPTEst4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGxoYmZpYGJo6GxsSpAgDt6C2l</recordid><startdate>20130613</startdate><enddate>20130613</enddate><creator>EMERSON DAVID TODD</creator><creator>EDMOND JOHN</creator><scope>EVB</scope></search><sort><creationdate>20130613</creationdate><title>Optoelectronic Structures with High Lumens Per Wafer</title><author>EMERSON DAVID TODD ; EDMOND JOHN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2013146904A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>EMERSON DAVID TODD</creatorcontrib><creatorcontrib>EDMOND JOHN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>EMERSON DAVID TODD</au><au>EDMOND JOHN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Optoelectronic Structures with High Lumens Per Wafer</title><date>2013-06-13</date><risdate>2013</risdate><abstract>An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Optoelectronic Structures with High Lumens Per Wafer |
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