RADIATION DETECTORS AND METHODS OF FABRICATING RADIATION DETECTORS

RADIATION DETECTORS AND METHODS OF FABRICATING RADIATION DETECTORS

Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence i...

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Hauptverfasser: SHAHAR ARIE, TRAUB ELIEZER, SCLAR DIEGO, RUSIAN PETER
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SHAHAR ARIE
TRAUB ELIEZER
SCLAR DIEGO
RUSIAN PETER
description Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 mum to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2013126998A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2013126998A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2013126998A13</originalsourceid><addsrcrecordid>eNrjZHAKcnTxdAzx9PdTcHENcXUO8Q8KVnD0c1HwdQ3x8HcJVvB3U3BzdArydAYq8nNXwKKch4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEhwYbGRgaGxqZWVpaOBoaE6cKAKvULDU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RADIATION DETECTORS AND METHODS OF FABRICATING RADIATION DETECTORS</title><source>esp@cenet</source><creator>SHAHAR ARIE ; TRAUB ELIEZER ; SCLAR DIEGO ; RUSIAN PETER</creator><creatorcontrib>SHAHAR ARIE ; TRAUB ELIEZER ; SCLAR DIEGO ; RUSIAN PETER</creatorcontrib><description>Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 mum to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130523&amp;DB=EPODOC&amp;CC=US&amp;NR=2013126998A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130523&amp;DB=EPODOC&amp;CC=US&amp;NR=2013126998A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHAHAR ARIE</creatorcontrib><creatorcontrib>TRAUB ELIEZER</creatorcontrib><creatorcontrib>SCLAR DIEGO</creatorcontrib><creatorcontrib>RUSIAN PETER</creatorcontrib><title>RADIATION DETECTORS AND METHODS OF FABRICATING RADIATION DETECTORS</title><description>Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 mum to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAKcnTxdAzx9PdTcHENcXUO8Q8KVnD0c1HwdQ3x8HcJVvB3U3BzdArydAYq8nNXwKKch4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEhwYbGRgaGxqZWVpaOBoaE6cKAKvULDU</recordid><startdate>20130523</startdate><enddate>20130523</enddate><creator>SHAHAR ARIE</creator><creator>TRAUB ELIEZER</creator><creator>SCLAR DIEGO</creator><creator>RUSIAN PETER</creator><scope>EVB</scope></search><sort><creationdate>20130523</creationdate><title>RADIATION DETECTORS AND METHODS OF FABRICATING RADIATION DETECTORS</title><author>SHAHAR ARIE ; TRAUB ELIEZER ; SCLAR DIEGO ; RUSIAN PETER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2013126998A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHAHAR ARIE</creatorcontrib><creatorcontrib>TRAUB ELIEZER</creatorcontrib><creatorcontrib>SCLAR DIEGO</creatorcontrib><creatorcontrib>RUSIAN PETER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHAHAR ARIE</au><au>TRAUB ELIEZER</au><au>SCLAR DIEGO</au><au>RUSIAN PETER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RADIATION DETECTORS AND METHODS OF FABRICATING RADIATION DETECTORS</title><date>2013-05-23</date><risdate>2013</risdate><abstract>Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 mum to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title RADIATION DETECTORS AND METHODS OF FABRICATING RADIATION DETECTORS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T20%3A49%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHAHAR%20ARIE&rft.date=2013-05-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2013126998A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true