HIGH VOLTAGE SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

A method for fabricating a high voltage semiconductor device is provided. Firstly, a substrate is provided, wherein the substrate has a first active zone and a second active zone. Then, a first ion implantation process is performed to dope the substrate by a first mask layer, thereby forming a first...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WU TE-YUAN, LI NIENUNG, YEH YU-TING, LU KUAN-WEN, TENG CHING-WEI, CHEN LI, CHIEN FUUN, WANG CHIHUNG, PU CHIHUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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