PHOTOELECTRIC CONVERSION DEVICE

PHOTOELECTRIC CONVERSION DEVICE

It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer located on the ele...

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Hauptverfasser: KAMADA RUI, KASAI SHUICHI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KAMADA RUI
KASAI SHUICHI
description It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer located on the electrode layer and comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen, and a second semiconductor layer located on the first semiconductor layer and forming a pn junction with the first semiconductor layer. In the photoelectric conversion device, the first semiconductor layer has a higher molar concentration of oxygen in a part located on the electrode layer side with respect to a center portion in a lamination direction of the first semiconductor layer than a molar concentration of oxygen in the whole of the first semiconductor layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTOELECTRIC CONVERSION DEVICE
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