NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME

NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME

A nonvolatile semiconductor storage device includes: a structural body; semiconductor layers; a memory film; a connecting member; and a conductive member. The structural body is provided above a memory region of a substrate including the memory region and a non-memory region, and includes electrode...

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Hauptverfasser: IINO HIROMITSU, IGUCHI TADASHI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator IINO HIROMITSU
IGUCHI TADASHI
description A nonvolatile semiconductor storage device includes: a structural body; semiconductor layers; a memory film; a connecting member; and a conductive member. The structural body is provided above a memory region of a substrate including the memory region and a non-memory region, and includes electrode films stacked along a first axis perpendicular to a major surface of the substrate. The semiconductor layers penetrate through the structural body along the first axis. The memory film is provided between the electrode films and the semiconductor layer. The connecting member is provided between the substrate and the structural body and connected to respective end portions of two adjacent ones of the semiconductor layers. The conductive member is provided between the substrate and the connecting member, extends from the memory region to the non-memory region, includes a recess provided above the non-memory region, and includes a first silicide portion provided in the recess.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2013056818A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2013056818A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2013056818A13</originalsourceid><addsrcrecordid>eNrjZPDy8_cL8_dxDPH0cVUIdvX1dPb3cwl1DvEPUggGEo7urgourmGezq4Kjn4uCr6uIR7-LgpuQFlfR79QN0fnkNAgTz93hWBHX1ceBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhIfGmxkYGhsYGpmYWjhaGhMnCoAOnYujQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME</title><source>esp@cenet</source><creator>IINO HIROMITSU ; IGUCHI TADASHI</creator><creatorcontrib>IINO HIROMITSU ; IGUCHI TADASHI</creatorcontrib><description>A nonvolatile semiconductor storage device includes: a structural body; semiconductor layers; a memory film; a connecting member; and a conductive member. The structural body is provided above a memory region of a substrate including the memory region and a non-memory region, and includes electrode films stacked along a first axis perpendicular to a major surface of the substrate. The semiconductor layers penetrate through the structural body along the first axis. The memory film is provided between the electrode films and the semiconductor layer. The connecting member is provided between the substrate and the structural body and connected to respective end portions of two adjacent ones of the semiconductor layers. The conductive member is provided between the substrate and the connecting member, extends from the memory region to the non-memory region, includes a recess provided above the non-memory region, and includes a first silicide portion provided in the recess.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130307&amp;DB=EPODOC&amp;CC=US&amp;NR=2013056818A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130307&amp;DB=EPODOC&amp;CC=US&amp;NR=2013056818A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IINO HIROMITSU</creatorcontrib><creatorcontrib>IGUCHI TADASHI</creatorcontrib><title>NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME</title><description>A nonvolatile semiconductor storage device includes: a structural body; semiconductor layers; a memory film; a connecting member; and a conductive member. The structural body is provided above a memory region of a substrate including the memory region and a non-memory region, and includes electrode films stacked along a first axis perpendicular to a major surface of the substrate. The semiconductor layers penetrate through the structural body along the first axis. The memory film is provided between the electrode films and the semiconductor layer. The connecting member is provided between the substrate and the structural body and connected to respective end portions of two adjacent ones of the semiconductor layers. The conductive member is provided between the substrate and the connecting member, extends from the memory region to the non-memory region, includes a recess provided above the non-memory region, and includes a first silicide portion provided in the recess.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDy8_cL8_dxDPH0cVUIdvX1dPb3cwl1DvEPUggGEo7urgourmGezq4Kjn4uCr6uIR7-LgpuQFlfR79QN0fnkNAgTz93hWBHX1ceBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhIfGmxkYGhsYGpmYWjhaGhMnCoAOnYujQ</recordid><startdate>20130307</startdate><enddate>20130307</enddate><creator>IINO HIROMITSU</creator><creator>IGUCHI TADASHI</creator><scope>EVB</scope></search><sort><creationdate>20130307</creationdate><title>NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME</title><author>IINO HIROMITSU ; IGUCHI TADASHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2013056818A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IINO HIROMITSU</creatorcontrib><creatorcontrib>IGUCHI TADASHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IINO HIROMITSU</au><au>IGUCHI TADASHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME</title><date>2013-03-07</date><risdate>2013</risdate><abstract>A nonvolatile semiconductor storage device includes: a structural body; semiconductor layers; a memory film; a connecting member; and a conductive member. The structural body is provided above a memory region of a substrate including the memory region and a non-memory region, and includes electrode films stacked along a first axis perpendicular to a major surface of the substrate. The semiconductor layers penetrate through the structural body along the first axis. The memory film is provided between the electrode films and the semiconductor layer. The connecting member is provided between the substrate and the structural body and connected to respective end portions of two adjacent ones of the semiconductor layers. The conductive member is provided between the substrate and the connecting member, extends from the memory region to the non-memory region, includes a recess provided above the non-memory region, and includes a first silicide portion provided in the recess.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T07%3A53%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=IINO%20HIROMITSU&rft.date=2013-03-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2013056818A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true