METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS
Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second...
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| creator | OLSEN CHRISTOPHER CURTIS ROGER HAWRYLCHAK LARA HWANG BERNARD L TOBIN JEFFREY BEVAN MALCOM J ROGERS MATTHEW S LAI KEN KAUNG |
| description | Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port. |
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In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130214&DB=EPODOC&CC=US&NR=2013040444A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130214&DB=EPODOC&CC=US&NR=2013040444A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OLSEN CHRISTOPHER</creatorcontrib><creatorcontrib>CURTIS ROGER</creatorcontrib><creatorcontrib>HAWRYLCHAK LARA</creatorcontrib><creatorcontrib>HWANG BERNARD L</creatorcontrib><creatorcontrib>TOBIN JEFFREY</creatorcontrib><creatorcontrib>BEVAN MALCOM J</creatorcontrib><creatorcontrib>ROGERS MATTHEW S</creatorcontrib><creatorcontrib>LAI KEN KAUNG</creatorcontrib><title>METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS</title><description>Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDzdQ3x8HdRcPQD4oAAxyDHkNBgBTf_IIVgVx9X5xDPMFcFP8-QIE8XxxBPfz-FgCB_Z9fgYB4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgaGxgYmBiYuJoaEycKgC_vSjx</recordid><startdate>20130214</startdate><enddate>20130214</enddate><creator>OLSEN CHRISTOPHER</creator><creator>CURTIS ROGER</creator><creator>HAWRYLCHAK LARA</creator><creator>HWANG BERNARD L</creator><creator>TOBIN JEFFREY</creator><creator>BEVAN MALCOM J</creator><creator>ROGERS MATTHEW S</creator><creator>LAI KEN KAUNG</creator><scope>EVB</scope></search><sort><creationdate>20130214</creationdate><title>METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS</title><author>OLSEN CHRISTOPHER ; CURTIS ROGER ; HAWRYLCHAK LARA ; HWANG BERNARD L ; TOBIN JEFFREY ; BEVAN MALCOM J ; ROGERS MATTHEW S ; LAI KEN KAUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2013040444A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OLSEN CHRISTOPHER</creatorcontrib><creatorcontrib>CURTIS ROGER</creatorcontrib><creatorcontrib>HAWRYLCHAK LARA</creatorcontrib><creatorcontrib>HWANG BERNARD L</creatorcontrib><creatorcontrib>TOBIN JEFFREY</creatorcontrib><creatorcontrib>BEVAN MALCOM J</creatorcontrib><creatorcontrib>ROGERS MATTHEW S</creatorcontrib><creatorcontrib>LAI KEN KAUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OLSEN CHRISTOPHER</au><au>CURTIS ROGER</au><au>HAWRYLCHAK LARA</au><au>HWANG BERNARD L</au><au>TOBIN JEFFREY</au><au>BEVAN MALCOM J</au><au>ROGERS MATTHEW S</au><au>LAI KEN KAUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS</title><date>2013-02-14</date><risdate>2013</risdate><abstract>Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS |
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