METHOD FOR FORMING STRUCTURE FOR REDUCING NOISE IN CMOS IMAGE SENSORS

METHOD FOR FORMING STRUCTURE FOR REDUCING NOISE IN CMOS IMAGE SENSORS

A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light bl...

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Hauptverfasser: WU TIENI, LIN TSUNG-YI
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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LIN TSUNG-YI
description A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes an opaque layer or a black light filter layer in conjunction with an opaque layer, covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer and the black light filter layer where the light blocking portion is desired, but not over the active section. The method also provides for forming microlenses over the photosensors in the active section.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR FORMING STRUCTURE FOR REDUCING NOISE IN CMOS IMAGE SENSORS
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