RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES AND METHODS OF FORMING RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES
A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells, an RF input lead coupled to the plurality of RF transistor cells, an RF output lead, and an output matching network coupled between the plurality of RF transistor cells and the RF output lead....
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creator | WOOD SIMON MAURICE ANDRE ULF HAKAN |
description | A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells, an RF input lead coupled to the plurality of RF transistor cells, an RF output lead, and an output matching network coupled between the plurality of RF transistor cells and the RF output lead. The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer. |
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The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer.</description><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130117&DB=EPODOC&CC=US&NR=2013015924A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130117&DB=EPODOC&CC=US&NR=2013015924A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WOOD SIMON MAURICE</creatorcontrib><creatorcontrib>ANDRE ULF HAKAN</creatorcontrib><title>RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES AND METHODS OF FORMING RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES</title><description>A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells, an RF input lead coupled to the plurality of RF transistor cells, an RF output lead, and an output matching network coupled between the plurality of RF transistor cells and the RF output lead. The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqlzD0KwkAQQOE0FqLeYcBayCZaWI6b_Rk0u7o7QbQJQdZKNBBP42m18ACC1Ws-3jh7BQ0c0EWK7APsUW7RqAhHYguWjAUd1KFRTp4gMm5oR2dk8g60Qm7Ch6KroFZsfRXBa9A-1OQM_D2eZqNrdxvS7NtJNteKpV2k_tGmoe8u6Z6ebROLXJS5WK2LJYryN_UGTMBEzQ</recordid><startdate>20130117</startdate><enddate>20130117</enddate><creator>WOOD SIMON MAURICE</creator><creator>ANDRE ULF HAKAN</creator><scope>EVB</scope></search><sort><creationdate>20130117</creationdate><title>RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES AND METHODS OF FORMING RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES</title><author>WOOD SIMON MAURICE ; ANDRE ULF HAKAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2013015924A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>WOOD SIMON MAURICE</creatorcontrib><creatorcontrib>ANDRE ULF HAKAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WOOD SIMON MAURICE</au><au>ANDRE ULF HAKAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES AND METHODS OF FORMING RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES</title><date>2013-01-17</date><risdate>2013</risdate><abstract>A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells, an RF input lead coupled to the plurality of RF transistor cells, an RF output lead, and an output matching network coupled between the plurality of RF transistor cells and the RF output lead. The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS |
title | RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES AND METHODS OF FORMING RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES |
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